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SAMSUNG SSD 860 EVO SATA III 2TB 2.5 inch The SSD that makes the difference

SAMSUNG SSD 860 EVO SATA III 2TB 2.5 inch The SSD that makes the difference

Sequential Read Speed 550MB/sec, Sequential Write Speed 520MB/sec, Random Read (QD1/32) 10K/98K IOPS, Random Write (QD1/32) 42K/90K IOPS, 5 Years Warranty

Description


25,000.00 บาท (รวมภาษี)

SSG-MZ-76E2T0BW

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Rating: 7.0/10 (1 vote cast)

SSD 860 EVO - 2TB

The SSD that makes the difference

Samsung SSD 860 EVO The SSD that makes the difference
Samsung SSD 860 PRO l EVO : Performance that endures 

The SSD to trust

The newest edition to the world’s best-selling* SATA SSD series, the Samsung 860 EVO. Specially designed for mainstream PCs and laptops, with the latest V-NAND and a robust algorithm-based controller, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.

Samsung SSD 860 EVO The SSD to trust

* Sources: NPD (US data from Jan. 2015 to Oct. 2017) and GfK (EU5 data from Jan. 2015 to Sep. 2017, China data from Jan. 2016 to Sep. 2017) 

Enhanced performance

Speeds are more consistent, even with heavy workloads and multi-tasks. The 860 EVO performs at sequential
writes up to 520 MB/s* with Intelligent TurboWrite technology, and sequential reads up to 550 MB/s.
The TurboWrite buffer size* is upgraded from 12 GB to 78 GB for faster file transfer.

Samsung SSD 860 EVO Enhanced performance

* Performance may vary based on SSD’s firmware version and system hardware & configuration. Sequential write performance measurements are based on Intelligent TurboWrite technology. Sequential performance measurements based on CrystalDiskMark v.5.0.2 and IOmeter 1.1.0. The sequential write performances after Intelligent TurboWrite region are 300 MB/s for 250/500 GB and 500 MB/s for 1 TB.

* Test system configuration: Intel Core i5-3550 CPU @ 3.3 GHz, DDR3 1333 MHz 4 GB, OS – Windows 7 Ultimate x64, Chipset: ASUS P8H77-V

* The TurboWrite buffer size varies based on the capacity of the SSD; 12 GB for 250 GB model, 22 GB for 500 GB model, 42 GB for 1 TB model and 78 GB for 2/4 TB. For more information on the TurboWrite, please visit www.samsungssd.com. 

Boosted endurance

Safely store and render large sized 4K videos and 3D data used by the latest applications, up to 8x higher TBW (Terabytes Written)* than the previous 850 EVO. The latest V-NAND technology gives you up to 2,400 TBW, or is backed by a 5-year limited warranty.*

Samsung SSD 860 EVO Boosted endurance

* Warrantied TBW for 860 EVO: 150 TBW for 250 GB model, 300 TBW for 500 GB model, 600 TBW for 1 TB model, 1,200 TBW for 2 TB model and 2,400 TBW for 4 TB model.

* 5-years or TBW, whichever comes first. For more information on the warranty, please find the enclosed warranty statement in the package 

Smart compatibility

Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility. Our advanced engineering makes the 860 EVO more compatible with your computing system.

Samsung SSD 860 EVO Smart compatibility

* Error Correction Code 

Multi form factors

Whatever size your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.

Samsung SSD 860 EVO Multi form factors

Samsung Magician

Samsung SSD 860 EVO Management software Icon

Management software

Samsung Magician software is designed to help you manage your SSD with a simple and intuitive user interface.

Samsung SSD 860 EVO Management software
Samsung SSD 860 EVO Firmware update Icon

Firmware update

Get notifications when new firmware is released, and easily install updates for enhanced performance, stability, and compatibility.

Samsung SSD 860 EVO Firmware update
Samsung SSD 860 EVO Performance benchmark Icon

Performance benchmark

Check your SSD's sequential and random read/write speeds, so you can maintain superb performance.

Samsung SSD 860 EVO Performance benchmark
Samsung SSD 860 EVO Data security Icon

Data security

Protect data by selecting security options. The 860 EVO supports AES 256-bit hardware-based encryption and is compliant with TCG Opal and IEEE 1667.

Samsung SSD 860 EVO Data security

SPECIFICATIONS

Form Factor

2.5 inch, mSATA, M.2

Capacity

250 GB, 500 GB, 1 TB, 2 TB, 4 TB

Sequential Read Speed

Up to 550 MB/sec

Sequential Write Speed

Up to 520 MB/sec

 

SHOW MORE SPECS (2.5-Inch) layer close

MORE SPECS

Model Code (Capacity)1)

  • MZ-76E250BW (250 GB)

  • MZ-76E500BW (500 GB)

  • MZ-76E1T0BW (1 TB)

  • MZ-76E2T0BW (2 TB)

  • MZ-76E4T0BW (4 TB)

General Feature

  • Application

    Client PCs

  • FORM FACTOR

    2.5 inch

  • INTERFACE

    SATA 6Gb/s
    (compatible with SATA 3Gb/s & SATA 1.5Gb/s)

  • DIMENSION (WxHxD)

    100 X 69.85 X 6.8 (mm)

  • WEIGHT

    250 GB, 500 GB: Max 50.0g
    1TB: Max 51.0g
    2TB: Max 60.0g
    4TB: Max 62.0g

  • STORAGE MEMORY

    Samsung V-NAND 3bit MLC

  • CONTROLLER

    Samsung MJX Controller

  • CACHE MEMORY

    512 MB Low Power DDR4 SDRAM
    (250 GB, 500 GB)
    1 GB Low Power DDR4 SDRAM (1 TB)
    2 GB Low Power DDR4 SDRAM (2 TB)
    4 GB Low Power DDR4 SDRAM (4 TB)

Special Feature

  • TRIM Support

    Yes

  • S.M.A.R.T Support

    Yes

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Yes

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    Up to 550 MB/s

  • SEQUENTIAL WRITE

    Up to 520 MB/s

  • RANDOM READ (4KB, QD32)

    Up to 98,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    Up to 90,000 IOPS

  • RANDOM READ (4KB, QD1)

    Up to 10,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    Up to 42,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION
    (System Level)3)

    250 GB: Average 2.2 W Maximum 4.0 W
    500 GB: Average 2.5 W Maximum 4.0 W
    1 TB: Average 3.0 W Maximum 4.0 W
    2 TB: Average 3.0 W Maximum 4.0 W
    4 TB: Average 3.0 W Maximum 4.0 W
    (Burst mode)

  • POWER CONSUMPTION (IDLE)3)

    Max. 50mW

  • Power consumption (Device Sleep)

    Max. 2mW

  • ALLOWABLE VOLTAGE

    5V ± 5% Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability

  • OPERATING TEMPERATURE

    0 - 70 ℃

  • Shock

    1,500 G & 0.5 ms (Half sine)

Accessories

  • INSTALLATION KIT

    N/A

Software

Warranty

  • MZ-76E250BW (250 GB)

    5 Years or 150 TBW

  • MZ-76E500BW (500 GB)

    5 Years or 300 TBW

  • MZ-76E1T0BW (1 TB)

    5 Years or 600 TBW

  • MZ-76E2T0BW (2 TB)

    5 Year or 1,200 TBW

  • MZ-76E4T0BW (4 TB)

    5 Year or 2,400 TBW

  • 1) 1 GB=1 Billionbyte by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
  • 2) Performance may vary based on system hardware & configuration
  • 3) Actual power consumption may vary depending on system hardware & configuration


SHOW MORE SPECS (mSATA) layer close

MORE SPECS

Model Code (Capacity)1)

  • MZ-M6E250BW (250 GB)

  • MZ-M6E500BW (500 GB)

  • MZ-M6E1T0BW (1 TB)

General Feature

  • Application

    Client PCs

  • FORM FACTOR

    mSATA

  • INTERFACE

    SATA 6Gb/s
    (compatible with SATA 3Gb/s & SATA 1.5Gb/s)

  • DIMENSION (WxHxD)

    (29.85±0.15) x (50.80±0.15) x Max 3.85 (mm)

  • WEIGHT

    Max. 8.5g

  • STORAGE MEMORY

    Samsung V-NAND 3bit MLC

  • CONTROLLER

    Samsung MJX Controller

  • CACHE MEMORY

    512 MB Low Power DDR4 SDRAM
    (250 GB, 500 GB)
    1 GB Low Power DDR4 SDRAM (1 TB)

Special Feature

  • TRIM Support

    Yes

  • S.M.A.R.T Support

    Yes

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Yes

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    Up to 550 MB/s

  • SEQUENTIAL WRITE

    Up to 520 MB/s

  • RANDOM READ (4KB, QD32)

    Up to 97,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    Up to 88,000 IOPS

  • RANDOM READ (4KB, QD1)

    Up to 10,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    Up to 42,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION
    (System Level)3)

    250 GB: Average 2.2 W Maximum 4.5 W
    500 GB: Average 2.5 W Maximum 4.5 W
    1 TB: Average 3.0 W Maximum 4.5 W
    (Burst mode)

  • POWER CONSUMPTION (IDLE)3)

    Max. 50mW

  • Power consumption (Device Sleep)

    Max. 2mW

  • ALLOWABLE VOLTAGE

    5V ± 5% Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability

  • OPERATING TEMPERATURE

    0 - 70 ℃

  • Shock

    1,500 G & 0.5 ms (Half sine)

Accessories

  • INSTALLATION KIT

    N/A

Software

Warranty

  • MZ-M6E250BW (250 GB)

    5 Years or 150 TBW

  • MZ-M6E500BW (500 GB)

    5 Years or 300 TBW

  • MZ-M6E1T0BW (1 TB)

    5 Years or 600 TBW

  • 1) 1 GB=1 Billionbyte by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
  • 2) Performance may vary based on system hardware & configuration
  • 3) Actual power consumption may vary depending on system hardware & configuration


Show More Specs (M.2) layer close

MORE SPECS

Model Code (Capacity)1)

  • MZ-N6E250BW (250 GB)

  • MZ-N6E500BW (500 GB)

  • MZ-N6E1T0BW (1 TB)

  • MZ-N6E2T0BW (2 TB)

General Feature

  • Application

    Client PCs

  • FORM FACTOR

    M.2

  • INTERFACE

    SATA 6Gb/s
    (compatible with SATA 3Gb/s & SATA 1.5Gb/s)

  • DIMENSION (WxHxD)

    Max 80.15 x 22.15 x 2.38 (mm)

  • WEIGHT

    Max. 8.0g

  • STORAGE MEMORY

    Samsung V-NAND 3bit MLC

  • CONTROLLER

    Samsung MJX Controller

  • CACHE MEMORY

    512 MB Low Power DDR4 SDRAM
    (250 GB, 500 GB)
    1 GB Low Power DDR4 SDRAM (1 TB, 2 TB)

Special Feature

  • TRIM Support

    Yes

  • S.M.A.R.T Support

    Yes

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Yes

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    Up to 550 MB/s

  • SEQUENTIAL WRITE

    Up to 520 MB/s

  • RANDOM READ (4KB, QD32)

    Up to 97,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    Up to 88,000 IOPS

  • RANDOM READ (4KB, QD1)

    Up to 10,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    Up to 42,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION
    (System Level)3)

    250 GB: Average 2.2 W Maximum 4.0 W
    500 GB: Average 2.5 W Maximum 4.0 W
    1 TB: Average 3.0 W Maximum 4.5 W
    2 TB: Average 3.0 W Maximum 4.5 W
    (Burst mode)

  • POWER CONSUMPTION (IDLE)3)

    Max. 50mW

  • Power consumption (Device Sleep)

    Max. 2mW

  • ALLOWABLE VOLTAGE

    5V ± 5% Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability

  • OPERATING TEMPERATURE

    0 - 70 ℃

  • Shock

    1,500 G & 0.5 ms (Half sine)

Accessories

  • INSTALLATION KIT

    N/A

Software

Warranty

  • MZ-N6E250BW (250 GB)

    5 Years or 150 TBW

  • MZ-N6E500BW (500 GB)

    5 Years or 300 TBW

  • MZ-N6E1T0BW (1 TB)

    5 Years or 600 TBW

  • MZ-N6E2T0BW (2 TB)

    5 Years or 1,200 TBW

  • 1) 1 GB=1 Billionbyte by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
  • 2) Performance may vary based on system hardware & configuration
  • 3) Actual power consumption may vary depending on system hardware & configuration

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